Characterization of Nanosized Al2O3 Powder Synthesized by Thermal-Assisted MOCVD and Plasma-Assisted MOCVD
Authors
Abstract:
Nanosized Al2O3 powder is synthesized by thermal Metal Organic Chemical Vapor Deposition (MOCVD)combined withplasma. The effects of reaction temperature, pressure, Al(CH3)3 (TMA) concentration and reactant gases (CO2 and O2) on the characteristics of the synthesized Al2O3 powders are investigated. The experimental results demonstrate that very fineAl2O3 powders with mean particle size of about 2.5 nm can be obtained at 5.3kPareactor pressure and 1000 oCby the thermal MOCVD. As the pressure is increased from 5.3kPa to 100 kPa, the mean diameter of Al2O3 powders also reaches to 10 nm. In other words, the increase in pressure has a negative effect on the synthesis of nanosized Al2O3. Meanwhile, it is also observed that the increment of temperature can promote the synthesis of fine Al2O3 powder.
similar resources
characterization of nanosized al2o3 powder synthesized by thermal-assisted mocvd and plasma-assisted mocvd
nanosized al2o3 powder is synthesized by thermal metal organic chemical vapor deposition (mocvd)combined withplasma. the effects of reaction temperature, pressure, al(ch3)3 (tma) concentration and reactant gases (co2 and o2) on the characteristics of the synthesized al2o3 powders are investigated. the experimental results demonstrate that very fineal2o3 powders with mean particle size of about ...
full textMODEL RESEARCH ON SYNTHESIS OF Al2O3-C LAYERS BY MOCVD BADANIA MODELOWE NAD SYNTEZĄ WARSTW Al2O3-C METODĄ MOCVD
These are model studies whose aim is to obtain information that would allow development of new technology for synthesizing monolayers of Al2O3-C with adjusted microstructure on cemented carbides. The Al2O3-C layer will constitute an intermediate layer on which the outer layer of Al2O3 without carbon is synthesized. The purpose of the intermediate layer is to block the cobalt diffusion to the sy...
full textGROWTH AND CHARACTERIZATION OF FERROMAGNETIC SEMICONDUKTOR GaN:Mn THIN FILMS USING PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION(PA-MOCVD) METHOD
GROWTH AND CHARACTERIZATION OF FERROMAGNETIC SEMICONDUKTOR GaN:Mn THIN FILMS USING PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION(PA-MOCVD)
full textCTAB-assisted of Fe2O3/CeO2 nanosized prepared by coprecipitation method
Recently, cerium oxide (CeO2) nanoparticles have been widely used in engineering andmedical sciences due to the diversity of their applications. Fe-Ce nanoparticles were synthesized bysimple co-precipitation method via iron nitrate (Fe(NO3)3.9H2O) and cerium nitrate (Ce(NO3)3.6H2O) asprecursor in the presence of cetyltrimethylammonium bromide (CTAB) surfactant. The samples wer...
full textThermal Stability of MOCVD and HVPE GaN Layers
This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were found to obey a dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gases to form condensed Ga in addition to the gaseous species. Differences in crystal qual...
full textHREM Characterization of Interfaces in Thin MOCVD Superconducting Films
This paper is concerned with high-T, superconducting compounds produced by metal-organic chemical vapour deposition. The nanostructure of different types of interfaces yttria stabilized zirconia buffer / (l-102)-sapphire substrate, YBazCu307-, film / Y2O3 precipitates as well as YBa2Cu307-, film / (001)-NdGa03, -SrTiO3, and -MgO substrates has been investigated by high resolution electron micro...
full textMy Resources
Journal title
volume 30 issue 3
pages 83- 88
publication date 2011-09-01
By following a journal you will be notified via email when a new issue of this journal is published.
Keywords
Hosted on Doprax cloud platform doprax.com
copyright © 2015-2023